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300 mm Wafer-scale In-situ CVD Growth Achieving 5.1×10 Ω-cm P-Type Contact Resistivity: Record 2.5×10 cm Active Doping and Demonstration on Highly-Scaled 3D Structures Abstract: For the first time, we ...
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Abstract: With the advantage of high surface-roughness tolerance, the pillar–concave Cu–Cu direct bonding without chemical-mechanical planarization (CMP) is investigated in detail, including the ...
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