Vishay Intertechnology is introducing four 100V Gen 2 Trench MOS Barrier Schottky (TMBS) rectifier modules. They are in the ...
New dual laser platform expands access to fiber and diode engraving for small businesses creators and educational users ...
Explore the new IGBT module that features advanced Trench Gate Field Stop technology for efficient power management.
The new modules feature Vishay’s latest generation silicon carbide (SiC) MOSFETs in the industry-standard SOT-227 package, ...
Vishay Intertechnology, Inc. has introduced four new 100 V Gen 2 Trench MOS Barrier Schottky (TMBS) rectifier modules in the compact, fully insulated SOT-227 package. Optimized for power conversion in ...
Five 1200-V SiC power modules in SOT-227 packages from Vishay serve as drop-in replacements for competing solutions.
A wide of array of advanced controllers arrived in 2025, marked by high integration and enhanced intelligence in solutions ...
Researchers in the Netherlands developed a model to identify tolerable degradation rates of the top cell in perovskite-silicon tandem modules. Simulations showed that an increase in tandem module ...
Save energy and make power systems work without changing boards. See how 1200 V SiC MOSFET modules handle high-speed power.
Morning Overview on MSN
New 1-way heat diode could let batteries survive extreme conditions
Engineers have long known how to steer electricity in one direction, but heat has been far harder to tame. Now a new one-way thermal “diode” promises to give designers similar control over heat flow, ...
The VS-SFxxA120 series 1200 V SiC MOSFET power modules from Vishay Intertechnology are silicon carbide devices packaged in an ...
Vishay Intertechnology, Inc. (NYSE: VSH) today introduced five new 1200 V MOSFET power modules designed to increase power ...
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