EDN

High-voltage SiC MOSFETs power critical energy systems

Navitas is now sampling 2.3-kV and 3.3-kV SiC MOSFETs in power-module, discrete, and known good die (KGD) formats.
Electronic Design

Keeping Pace with AI: Why Gate-All-Around Transistors are the Answer

As the industry advances into the angstrom era, gate-all-around architectures combined with atomic-scale materials ...
Electronic Design

The Intelligent Future of Digital Power Supplies

Fully digital architectures offer deeper visibility into the power supply’s performance as well as the health of the overall ...
Electronics Weekly

Power Supplies

ST has added 65 Watt flyback converter in the VIPerGaN series that combines a 700V GaN transistor and quasi-resonant PWM control IC in a single QFN 5×6 package. VIPerGaN65W is aimed at cost-effective ...
IEEE

Thermal Stability of Gate Driver Circuits Based on 4H-SiC MOSFETs at 300°C for High-Power Applications

Abstract: The operation and reliability of gate driver circuits based on 4H-SiC MOSFETs at temperatures up to 300°C were reported. Due to the advantages of 4H-SiC MOSFETs, the driver circuit can ...
IEEE

Carbon Emission Analysis of Power Transmission Equipment Based on XLPE Insulated Cables: From Cradle to Gate

Abstract: Faced with the critical pressure to decarbonize power systems and develop the green supply chain of grid companies, reducing carbon emissions of power equipment becomes a crucial means to ...