While attending APEC 2019, it seemed that gallium-nitride (GaN) transistors were just coming into their own in high-volume applications, while silicon-carbide (SiC) transistors have found wide ...
A new gate driver claims to ease the adoption of gallium nitride (GaN) technology in consumer and industrial applications such as power supplies in computer servers, factory-automation equipment, ...
Teledyne e2v HiRel Announces New 100 V High-Speed 20 MHz FET and GaN Transistor Driver Flip Chip Die
Teledyne e2v HiRel announces the new TD99102 UltraCMOS® High-speed FET and GaN transistor driver offering very high switching speed of 20 MHz. The new flip-chip part is ideal for driving Teledyne ...
MUNICH, Germany--(BUSINESS WIRE)--Panasonic Corporation today announced that it will start mass production of a high-speed gate driver (AN34092B) optimized for driving its GaN power transistor X-GaN ...
The Special Report on page 6 of this issue covers power supplies and loads and also offers coverage of products and technologies expected to be highlighted at APEC 2018, March 4-8 in San Antonio, TX.
The IG480RW is a series of High Isolation Insulated Gate Bipolar Transistor Driver DC/DC Converters with two models, IG480-12W and IG480-24W. The IG480-12W has an input voltage range of 9.0 ~ 18.0 Vdc ...
In power electronics, as found, for example, in drive technology, IGBTs are frequently used for high voltage and high current switching. These power transistors are voltage controlled and produce ...
* The transition to 3-D continues the pace of technology advancement, fueling Moore’s Law for years to come. * An unprecedented combination of performance improvement and power reduction to enable new ...
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