Nature

High Electron Mobility Transistors

High Electron Mobility Transistors (HEMTs) represent a pivotal class of devices in modern semiconductor technology, valued for their exceptional frequency performance and low noise characteristics.
Semiconductor Engineering

Improving GaN Device Architectures

As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits ...
EurekAlert!

How sputtering could drive the adoption of high-performance ScAlN-based transistors

Growth temperature is a critical parameter determining the sheet carrier density of scandium aluminum nitride (ScAlN)-based heterostructures, grown using the sputtering technique. Gallium nitride (GaN ...
Electronic Design

GaN HEMTs Bring Low-Noise Power to Switching Apps

What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...
Science Daily

New kind of transistor could shrink communications devices on smartphones

One month after announcing a ferroelectric semiconductor at the nanoscale thinness required for modern computing components, a team has now demonstrated a reconfigurable transistor using that material ...
EDN

RF GaN-on-Si transistor sets new performance benchmark

Imec claims a new benchmark for mobile RF transistor performance. The approach, based on a gallium nitride (GaN) metal-oxide semiconductor high-electron-mobility transistor (MOSHEMT) on silicon (Si), ...
Electronic Design

600-V GaN transistor gets JEDEC stamp

The TPH2006PS is said to be the first GaN high electron mobility transistor (HEMT) on SiC substrate to receive JEDEC qualification. The 600-V HEMT device comes from Transphorm Inc., Goleta, Calif., ...
Semiconductor Engineering

Challenges In Powering Electrification With GaN And SiC

The wish list of device properties that designers of power management systems would like to have is lengthy, but no single material is yet sufficient for the full range of power control applications.
EDN

Infineon unveils rad-hard GaN transistors

Infineon Technologies AG has launched the first of a new family of radiation-hardened (rad-hard) gallium nitride (GaN) transistors, based on its CoolGan technology. Complementing the company’s ...
Nature

High Electron Mobility Transistors and Thermal Management

High Electron Mobility Transistors (HEMTs) underpin many advanced electronic applications due to their superior performance in high-frequency and high-power regimes. The ongoing miniaturisation and ...